EMD52 complex digital transistors (bias resistor built-in transistors) datasheet l l outline parameter value emt6 v cc 50 v i c(max.) 100 ma r 1 22 k EMD52 r 2 22 k (sc-107c) parameter value v cc -50 v i c(max.) -100 ma r 1 22 k r 2 22 k l l features l l inner circuit 1) dta024e and dtc024e chip in a emt6 package. 2) transister elements are independent, eliminating interface. 3) mounting cost and area can be cut in half. 4) lead free/rohs compliant. l l application switching circuit, inverter circuit, interface circuit, driver circuit l l packaging specifications part no. package package size taping code reel size (mm) tape width (mm) basic ordering unit.(pcs) marking EMD52 emt6 1616 t2r 180 8 8000 d52 www.rohm.com ? 2013 rohm co., ltd. all rights reserved. 1/7 20131001 - rev. 002 http://
EMD52 datasheet absolute maximum ratings (t a = 25c) parameter symbol dtr1(npn) dtr2(pnp) unit supply voltage v cc 50 -50 v input voltage v in 40 to -10 -40 to 10 v output current i o 30 -30 ma collector current i c(max) *1 100 -100 ma power dissipation p d *2 *3 150 (total) mw/total junction temperature t j 150 range of storage temperature t stg -55 to + 150 electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. input voltage v i(off) v cc = 5 v, i o = 0.1 ma - - 0.5 v v i(on) v o = 0.3 v, i o = 5 ma 3 - - output voltage v o(on) i o / i i = 5 ma / 0.5 ma - 0.05 0.15 v input current i i v i = 5 v - - 0.36 ma output current i o(off) v cc = 50 v, v i = 0 v - - 0.5 a dc current gain g i v o = 10 v, i o = 5 ma 60 - - - input resistance r 1 - 15.4 22 28.6 k resistance ratio r 2 /r 1 - 0.8 1 1.2 - transition frequency f t *1 v ce = 10 v, i e = -5 ma, f = 100 mhz - 250 - mhz electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. input voltage v i(off) v cc = -5 v, i o = -0.1 ma - - -0.5 v v i(on) v o = -0.3 v, i o = -5 ma -3 - - output voltage v o(on) i o / i i = -5 ma / -0.5 ma - -0.07 -0.15 v input current i i v i = -5 v - - -0.36 ma output current i o(off) v cc = -50 v, v i = 0 v - - -0.5 a dc current gain g i v o = -10 v, i o = -5 ma 60 - - - input resistance r 1 - 15.4 22 28.6 k resistance ratio r 2 /r 1 - 0.8 1 1.2 - transition frequency f t *1 v ce = -10 v, i e = 5 ma, f = 100 mhz - 250 - mhz *1 characteristics of built-in transistor. *2 terminal mounted on a reference footprint. *3 120mw per element must not be exceeded. www.rohm.com ? 2013 rohm co., ltd. all rights reserved. 2/7 20131001 - rev. 002 http://
EMD52 datasheet electrical characteristic curves(t a =25c) fig.1 input voltage vs. output current (on characteristics) fig.2 output current vs. input voltage (off characteristics) fig.3 output current vs. output voltage fig.4 dc current gain vs. output current www.rohm.com ? 2013 rohm co., ltd. all rights reserved. 3/7 20131001 - rev. 002 http://
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fig.5 output voltage vs. output current www.rohm.com ? 2013 rohm co., ltd. all rights reserved. 4/7
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fig.1 input voltage vs. output current (on characteristics) fig.2 output current vs. input voltage (off characteristics) fig.3 output current vs. output voltage fig.4 dc current gain vs. output current www.rohm.com ? 2013 rohm co., ltd. all rights reserved. 5/7
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fig.5 output voltage vs. output current www.rohm.com ? 2013 rohm co., ltd. all rights reserved. 6/7
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EMD52 datasheet dimensions www.rohm.com ? 2013 rohm co., ltd. all rights reserved. 7/7 20131001 - rev. 002 http://
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